- MIFARE® DESFire® EV2 2K
- High-performance RAIN RFID c..
- RFID card of Eco-friendly ma..
- Smart Bio Luxury Packaging S..
- RFID WOODEN CARD
- Bluetooth and GPS tracking d..
- T5577 blank card
- High-performance HF tag IC f..
- Automotive safety and chargi..
- RFID Blocking Card
- Eco-Friendly card
- BlueTooth & Fingerprint
- NFC E-ink Tag
- Special card & Tag
- Teslin paper
Automotive safety and charging pile solutions

1. Dual-Key Architecture Innovation
DESFire® Duox pioneers the integration of asymmetric encryption (PKI) and symmetric encryption (AES/DES) within the MIFARE series, establishing a dual-security mechanism. This architecture enables:
Rapid Asymmetric Authentication: Streamlines key management via Public Key Infrastructure (PKI), ideal for cross-system or cross-organization scenarios.
Efficient Symmetric Encryption: Maintains the high-speed data processing of traditional AES/DES algorithms, optimized for high-frequency transactions.
2. Enhanced Security Performance
Achieves Common Criteria EAL5+ certification (equivalent to bank-grade smartcards) with hardware-level safeguards, including side-channel attack resistance and physical tamper detection.
Supports layered security policies, enabling dynamic encryption-level adjustments for diverse applications (e.g., low-security access control vs. high-security payment systems).
3. Expanded Application Scenarios
EV Charging Authentication: Ensures mutual authentication between charging stations and vehicles via PKI, preventing unauthorized charging or data tampering.
Smart Car Keys: Integrates NFC technology to enable smartphones or wearables as digital keys, with dynamic keys to block relay attacks.
Smart City Integration: Compatible with NXP’s AppXpplorer Cloud Service, supporting multi-application convergence (e.g., public transit, shared mobility, e-payments).
4. Technical Compatibility
Backward compatibility withISO/IEC 14443-4 and NFC standards, ensuring seamless integration with existing MIFARE® DESFire® EV3 infrastructure.
Features Transaction MAC (Message Authentication Code) and Virtual Card Architecture for enhanced privacy and data integrity.
5. Market Positioning & Significance
As the first MIFARE product to support public-key cryptography, Duox addresses the limitations of traditional symmetric encryption in high-security IoT scenarios. It delivers a standardized solution for device trust in smart cities, Industry 4.0, and beyond.
Product features | |
MIFARE® DUOX | |
IC characteristics for memory and RF interface | |
Non-volatile (NV) user memory size [KB] | 2/4/8/16 |
Write endurance and data retention | 1.000.000 cycles and 25 years |
Frequency [MHz] | 13.56 |
Baud rate [kbits/s] | 106 up to 848 (and support of VHBR) |
Standard compliance and certification | |
ISO/IEC 14443 | Layer 1-4 |
ISO/IEC 7816 | Yes, ISO/IEC 7816-4 commands and wrapped command format |
ISO/SAE 21434 | Yes |
Common Criteria | Certification on EAL 6+ AVA_VAN.5 (for HW and SW) |
NFC Forum | Tag Type 4 |
Security | |
Symmetric cryptography | AES-128, AES-256 |
Asymmetric cryptography | ECC with ECDSA, ECDH and NIST P-256 or brainpoolP256r1 |
Asymmetric authentication | ECC-based mutual, reader-unilateral and card-unilateral authentication |
Support of post-quantum-crypto | Future-proof for post-quantum era (via AES-256 strength and key length) |
Data confidentiality, authenticity, integrity | AES-CMAC, AES-CBC encryption, secure channel establishment via EV2 secure messaging, secure dynamic messaging (SUN feature) |
Extended features and functionality | |
True multi-application support | Unlimited number of application and Delegated Application Management feature |
Proximity Check | Mechanism to detect relay attacks |
Transaction MAC and Transaction Signature | Generating a secure proof of executed transactions |
Transaction Timer | Functionality to prevent man-in-the-middle attacks |
Originality Check | Verification of genuineness of the IC by dynamic ECC authentication |
EV-charging functionality | EV-charging specific command set as defined in VDE-AR-E 2532-100 |
Temperature range | -40 to +105°C on silicon level |